Enhancement-Mode GaN MIS-HEMT Utilizing Ferroelectric HZO and a Multilayer ZAZ Structure
강유전체 HZO 및 다층 ZAZ구조를 이용한 Enhancement GaN MIS-HEMT
- 주제(키워드) E-mode GaN MIS-HEMT , Ferroelectric HZO , Charge Trapping Layer , Retention Stability
- 발행기관 아주대학교 일반대학원
- 지도교수 Jang Hyun Kim
- 발행년도 2026
- 학위수여년월 2026. 8
- 학위명 석사
- 학과 및 전공 일반대학원 지능형반도체공학과
- 실제URI http://www.dcollection.net/handler/ajou/000000036544
- 본문언어 영어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
목차
Chapter 1. Introduction 1
1.1. Overview of GaN-Based Devices 1
1.2 Depletion-Mode Operation and the Need for E-mode GaN HEMTs 3
1.3 Various Research Approaches for E-mode GaN HEMTs 7
Chapter 2. Device Fabrication and Process Optimization 13
2.1 Epitaxial Layer Structure and Device Fabrication Process 13
2.2 Gate Dielectric Stack and Ohmic Contact Optimization 17
Chapter 3. Electrical Characterization of the Device 24
3.1 Electrical Characteristics of REF CTL and HZO CTL GaN MIS-HEMTs 24
3.2 Electrical and Retention Characteristics of HZO ZAZ GaN MIS-HEMTs 28
3.3 Output Characteristics of CTL-Based GaN MIS-HEMTs 32
Chapter 4. Conclusion 36
4.1 Conclusion 36
References 37
