Design of a Compact Four-way Wilkinson Combiner Balun for a mmWave SiGe HBT Power Amplifier
- 주제(키워드) SiGe HBT , PA , Combiner , Balun , mmWave
- 발행기관 아주대학교 일반대학원
- 지도교수 주인찬
- 발행년도 2025
- 학위수여년월 2025. 8
- 학위명 석사
- 학과 및 전공 일반대학원 지능형반도체공학과
- 실제URI http://www.dcollection.net/handler/ajou/000000035021
- 본문언어 영어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
This paper introduces a compact and high-efficiency Q-/V-band power amplifier (PA) utilizing a cascode SiGe HBT topology with an integrated four-way Wilkinson combiner balun (WCB). To address the challenges of wideband operation and chip area minimization, a modified impedance-inverting coupled-line balun structure is proposed. The reduced electrical length (θ < 45°) in the proposed balun enables extended bandwidth and improved matching performance without increasing layout complexity. A co-design approach involving schematic and layout optimization is employed to mitigate the impact of ground parasitic inductance on output performance. The fabricated amplifier, implemented in a 0.13-μm SiGe HBT BiCMOS process, delivers 24.1 dBm output power and 35.3% peak PAE at 43 GHz, achieving a bandwidth from 39 to 51 GHz. These results demonstrate the amplifier’s suitability for high-frequency applications, particularly in cost-sensitive satellite transmitters where linearity and integration density are critical.
more목차
I. Introduction 1
II.FOUR_WAY POWER COMBINER 4
A. Review of Four-Way Power Combiner 4
B. Proposed Four-Way Wilkinson Power Combiner Balun 7
III.Q-/V-BAND SiGe HBT CASCODE PA 20
A. Circuit Schematic of Q/V-band SiGe HBT PA 20
B. Design of SiGe HBT Cascode Output Stage 21
C. Other Passive Designs 24
D. Measurements and comparison 26
IV.CONCLUSION 33
A. Summary of the work 33
B. Future Work 33
REFERENCES 34
