Multivalued logic devices via directly patterned sol-gel metal oxide materials
- 주제(키워드) Multi-valued logic , Metal oxide transistor , Sol-gel process , Self-assembled monolayer , Indium-gallium-zinc oxide , Copper oxide
- 주제(DDC) 621.381
- 발행기관 아주대학교
- 지도교수 박성준
- 발행년도 2023
- 학위수여년월 2023. 8
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- 실제URI http://www.dcollection.net/handler/ajou/000000033061
- 본문언어 영어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
Recently, significant advancements have been made in the development of multi-valued logic (MVL) devices, including ternary inverters because of the issues of power consumption and processing speed caused by integrated circuits (ICs) integration improvement. In this study, we developed a ternary inverter fabricated by sol-gel metal oxide by self-assembled monolayer (SAM) process. First, we demonstrate that the self-aligned (directly patterned) sol-gel metal oxide process can manufacture thin film transistors (TFTs) on behalf of photolithography. Second, we prove how to control Vth by adjusting the oxygen vacancy of metal oxide channels through UVO treatment. Finally, we fabricate the high- performance metal oxide ternary inverter. These results suggest processes and materials that can fabricate high-performance ternary inverters with metal oxide semiconductors, and the possibility of a large-area process of ternary inverters.
more목차
제1장 Introduction 1
제1절 Multi-valued logic device fabricated metal oxide semiconductor 1
제2절 Modulation Vth by UVO treatment 1
제2장 Result and Discussion 4
제1절 Self-assembled monolayer (SAM) process 4
제2절 SAM process and photolithography TFTs characteristics 4
제3절 Modulate metal oxide TFTs Vth via UVO treatment 5
제4절 Ternary metal oxide inverter 8
제3장 Conclusion 10
제4장 Experimental section 11
제1절 Materials 11
제2절 Device fabrication 11
제3절 UVO treatment 12
제4절 Characterization 12
제5장 Reference 24
