Ge/III-V heterostructures for GaAs-based long-wavelength light sources
- 주제(키워드) Germanium , Isobutlygermane , metalorganic chemical vapor deposition (MOCVD) , epitaxial growth , single crystal , heterostructure , long-wavelength light source , light-emitting diode (LED) , edge-emitting laser diode (LD) , vertical-cavity surface emitting laser (VCSEL)
- 발행기관 아주대학교
- 지도교수 이재진
- 발행년도 2023
- 학위수여년월 2023. 8
- 학위명 박사
- 학과 및 전공 일반대학원 전자공학과
- 실제URI http://www.dcollection.net/handler/ajou/000000033028
- 본문언어 영어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
목차
Chapter 1. Background on long-wavelength light sources 1
1.1. Introduction 1
1.2. Limitation on InP-based long-wavelength light sources 5
1.3. Potential active material: Germanium (Ge) 9
1.3.1. Ge properties and its application 11
1.3.2. Single-crystal Ge film using the different Ge precursors 17
1.4. III-V/Ge/III-V double-heterostructures (DH) 19
1.4.1. Polar (III-V)-on-non-polar (Ge) epitaxy 19
1.4.2. Cross-doping 21
1.5. High-quality polar-on-non-polar epitaxy approaches 23
1.5.1 Prelayers such as As or Ga 23
1.5.2 Low-temperature GaAs buffer layer 25
1.5.3 AlxGa1-xAs buffer layer 25
1.6. Research objective and outline 27
Chapter 2. Experimental methods 30
2.1. Ge/III-V heterostructures using a LP-MOCVD system 30
2.2. Epitaxial growth 32
2.3. Material analysis and tools 33
2.3.1. Long-wavelength photoluminescence (PL) system 33
2.3.2. Material characterization 35
2.3.3. Light-current-voltage (L-I-V) set-up 36
Chapter 3. GaAs/Ge/GaAs double-heterostructures (DHs) 38
3.1. Single-crystalline Ge films using an IBuGe precursor 38
3.2. Polar (GaAs)-on-non-polar (Ge) epitaxy 48
3.3. Characterization of GaAs/Ge/GaAs DHs 57
3.3.1. Secondary ion mass spectrometry (SIMS) 57
3.3.2. High-resolution transmission electron microscopy (HRTEM) 58
3.3.3. STEM-energy dispersive X-ray spectroscopy (EDS) 59
3.4. Strong room-temperature photoluminescence 63
3.5. Conclusion 77
Chapter 4. GaAs-based long-wavelength light sources 78
4.1. Introduction 78
4.2. Top-emitting Ge light emitting diodes (Ge LEDs) 78
4.2.1. Fabrication procedures 81
4.2.2. Optical and electrical characteristics 83
4.2.3. Optical and electrical characteristics with the varied ambient temperatures 85
4.3. Edge-emitting Ge laser diodes (LDs) 88
4.3.1. Fabrication procedures 88
4.3.2. Fabry-Perot mirror 90
4.3.3. Optical and electrical properties 91
4.4. Conclusion 93
Chapter 5. Conclusion and Future work 94
5.1. Conclusion 94
5.2. Future work 96
5.2.1. Long-wavelength VCSELs onto a GaAs substrate 96
5.2.2. Thin-film Ge LEDs and LDs 97
References 98
Research achievements 118
