Ultra large-dynamic range IGZO neuromorphic transistors via photo-cross linked organic polymer dielectrics
광가교 고분자 절연체를 이용한 높은 동적 범위의 뉴로모픽 소자
- 주제(키워드) Neuromorhic device , Solution process , Polymer dielectric
- 주제(DDC) 621.381
- 발행기관 아주대학교
- 지도교수 박성준
- 발행년도 2023
- 학위수여년월 2023. 2
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- 실제URI http://www.dcollection.net/handler/ajou/000000032617
- 본문언어 한국어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
Because of its improved recognition and learning abilities in computing of neural network, three-terminal neuromorphic transistors have received a lot of attention. High-Synaptic weight (G) (i.e., conductance) and a broad weight update margin (i.e., dynamic range (DR)) are required for effective and speedy processing of parallel architecture and unorganized data. This research uses poly(norbornene-co-5-vinyl-2-norbornene), a cross-linked vinyl-added polynorbornene copolymer dielectric layer based on thiol-ene photoclick chemistry, to create a neuromorphic transistor with a high synaptic weight and broad dynamic range. Indium gallium zinc oxide with polymer treatment. The click reaction of the ultraviolet photoinduced thiol-ene polar cross linker pentaerythritol tetrakis(3-mercaptopropionate) (PETMP) generates free -OH groups in the insulator, activating the slow molecular depolarization effect on the IGZO semiconductor. An extensive and methodical research of the characteristics at the boundary between mating the cross-linked polymer insulator, IGZO channel showed impressive neuron behavior operation with a big channel conductance (~0.5 mS), wide dynamic range (~6200), and cycle operating stability at 104 successive pulses, resulting in accuracy of ~87% based on MNIST simulation.
more목차
Introduction 1
Solution processed dielectric based neuromorphic 1
Results 5
Polymer film characteristic 5
Film electrical characteristic 6
Polymer and thin film transistors electrical characteristic 8
Device schematic and neuromorphic behaivor 9
Cycle test and simulation 10
Conclustion 12
Experimental section 13
Materials 13
NB and VNB Vinyl Addition Copolymerization 13
Preparation of the Cross-linked P(NB/VNB) Film 13
Fabrication of Device 14
Reference 51
