A Study on Multivalent Metal Oxides-Based Neuromorphic Memory Devices
- 주제(키워드) Multivalent , Metal oxides , Neuromorphic , Memory devices
- 주제(DDC) 621.042
- 발행기관 아주대학교
- 지도교수 서형탁
- 발행년도 2023
- 학위수여년월 2023. 2
- 학위명 박사
- 학과 및 전공 일반대학원 에너지시스템학과
- 실제URI http://www.dcollection.net/handler/ajou/000000032614
- 본문언어 영어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
목차
Chapter 1. Introduction 1
1.1. Trends in Memory Technologies 1
1.2. Resistive Switching Devices 3
1.2.1. Materials 5
1.2.2. Modes 8
1.2.3. Operation Principles 9
1.3. Mott Transition 13
1.4. Neuromorphic Memory Devices 14
1.4.1. Two-Terminal Neuromorphic Devices 17
1.4.2. Three-Terminal Neuromorphic Devices 22
1.5. Dissertation Overview 25
1.6. Associated publications 29
Chapter 2. Multiphasic VOx Memtransistor 30
2.1. Introduction 30
2.2. Experimental Section 32
2.2.1. Device Fabrication 32
2.2.2. Device Characterization 33
2.2.3. Device Measurements 33
2.3. Results and Discussions 34
2.3.1. Proposed VOx-Based Memtransistor Structure 34
2.3.2. TEM-EELS Analysis 40
2.3.3. Electrical Measurements of VOx Memtransistor 46
2.3.4. Nanosecond Artificial Synaptic Characteristics 59
2.4. Summary 67
Chapter 3. Surface-engineered VOx memristor 70
3.1. Introduction 70
3.2. Experimental Section 73
3.2.1. Device Fabrication 73
3.2.2. Device characterization/measurements 74
3.2.3. Finite element simulation 74
3.3. Results and Discussion 74
3.3.1. Device Fabrication Method 74
3.3.2. Surface characterization 77
3.3.3. c-AFM and KPFM Analysis 80
3.3.4. Nanoscale Synaptic Characteristics 88
3.4. Summary 93
Chapter 4. Rectifying Resistive Switching of CoOx 95
4.1. Introduction 95
4.2. Experimental Section 97
4.2.1. Device Fabrication 97
4.2.2. Characterization of the Device 98
4.2.3. Electrical measurements 99
4.3. Results and discussion 99
4.3.1. Device Fabrication and Characterizations 99
4.3.2. Rectifying Resistive Switching and Mechanism 104
4.3.3. Synaptic Functions of Thermal Nanostructured Memristor 111
4.3.4. Pavlovian Learning by CoOx Memristor 118
4.4. Summary 121
Chapter 5. Proximity-Oxidation-Induced Mott Transition 123
5.1. Introduction 123
5.2. Experimental Section 126
5.2.1. Device Fabrication 126
5.2.2. Device Characterization 127
5.2.3. Characterization Tools 127
5.3. Results and Discussions 128
5.3.1. Fabrication and Characterizations of the Ti–V–O device 128
5.3.2. Elemental Composition of Ti–V–O Device 132
5.3.3. Mott Switching of the Ti–V–O devices 135
5.3.4. Synaptic Characteristics of Ti–V–O Device 140
5.4. Summary 145
Chapter 6. Conclusion and Future Work 147
6.1. Conclusion 147
6.2. Future Work 149
Bibliography 150
