Research on Surface Passivation of Ⅲ-Ⅴ Quantum Dots with Organic and Inorganic materials for Their Application to Display and IR photodetector.
- 주제(키워드) Quantum dots , photodetector , LED
- 주제(DDC) 547
- 발행기관 아주대학교
- 지도교수 김상욱
- 발행년도 2023
- 학위수여년월 2023. 2
- 학위명 박사
- 학과 및 전공 일반대학원 분자과학기술학과
- 실제URI http://www.dcollection.net/handler/ajou/000000032589
- 본문언어 영어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
목차
PART 1. Introduction 1
1. Quantum dots (Nanocrystals) 2
1.1 What is the quantum dots? 2
1.2 Classify of Quantum Dots with consistence elements 7
1.3. Surfactant for quantum dots 7
1.4. Classify of core/shell structure 9
2. Ⅲ-Ⅴ quantum dots 11
2.1. Introduction of Ⅲ-Ⅴ quantum dots 11
2.2. Problem of Ⅲ-Ⅴ quantum dots 12
2.3. Recently work of Ⅲ-Ⅴ quantum dots 12
3. References 17
PART 2. Improvement of InP quantum dots optical performance by adjustment of synthesis method and ligand exchange process. 20
Chapter 1. Highly Qualified InP Based QDs through Temperature Controlled ZnSe Shell Coating Process 21
1. Introduction 22
2. Experiment section. 24
2.1. Materials 24
2.2. Characterizations 24
2.3. Synthesis of Green-light-emitting InP QD 24
2.4. Synthesis of Red-light-emitting InP QD 25
2.5. On-chip LED fabrication with InGaP/ZnSe/ZnS QD 26
2.6. Computational details 26
3. Results and discussion 29
3.1. Effect of ZnSe inner shell and analysis thereof 29
3.2. DFT calculation for determine shape of QDs 39
3.3. On-Chip WLED fabrication 48
4. Conclusions 51
5. References 52
Chapter 2. Unprecedented surface stabilized InP quantum dots with bidentate ligands 54
1. Introduction 55
2. Experiment section 57
2.1. Materials 57
2.2. Characterization 57
2.3. Synthesis of 1,2-hexadecanedithiol. 57
2.4. Synthesis of blue-light-emitting ZnSe/ZnS QDs 58
2.5. Ligand exchange process 59
3. Results and discussion 60
3.1. Property of dithiol exchanged QDs 60
3.2. Dithiol-exchanged QDs to a LED as a solid-state light device 71
4. Conclusions 74
5. References 75
PART 3. InSb quantum dots : Ⅲ-Ⅴ quantum dots for NIR-SWIR region 77
Chapter 3. Performance improvement of InSb QDs via modified method and core-shell structure 78
1. Introduction 79
2. Experiment section 82
2.1. Materials 82
2.2. Characterization 82
2.3. Electrical characterization of the OPDs 82
2.4. Synthesis of InSb QDs. 83
2.5. Synthesis of InSb/InAs QDs. 83
2.6. Synthesis of InSb/InAs/ZnSe QDs 83
2.7. Materials and device fabrication on glass 84
3. Results and discussion 85
3.1. Characterization of InSb core QDs 85
3.2. InSb/InAs core/shell and InSb/InAs/ZnSe core/shell/shell QDs 91
3.3. Fabrication of InSb QD based photodetector device 99
4. Conclusions 103
5. References 104
PART 4. Conclusions 106
1. Conclusions 107
Abstract in Korean 108
