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Fabrication of Conjugated Polymer Nanowires for High-Mobility and High-Conductivity Device Applications

Fabrication of Conjugated Polymer Nanowires for High-Mobility and High-Conductivity Device Applications

초록/요약

The organic electronic devices have received significantly attention over the past three decades, emerging a field with enormous potential for new materials and applications to a real industry. Broad applications of organic semiconductors will depend on the development of materials with their appealing merits including mechanical flexibility, in expensive solution-processability, lightness, versatile chemical design and synthesis. Among various organic semiconducting materials, π-conjugated polymers have been studied as promising materials because most polymer materials have excellent electrical properties and soluble in common solvents thus polymer films can be prepared through solution process and printing. For high charge carrier properties, π-conjugated polymer film using solution process were increase crystallinity of a mixture film composed to amorphous and crystalline region which higher crystalline region enhances interchain charge transport and improving the mobility of charges. Therefore, we investigated to two conjugated polymer nanowires for using whisker method which manufactured self-assembled nanowires through solubility control using good and poor solvents. First, conjugated polymer nanowires using a high mobility DPP-based donor-acceptor type polymer were applicated field-effect transistor exhibit impressive hole mobility of up to 4.0 cm2 V−1 s−1. Second, P3HT, a prototypical semiconducting polymer that can forming nanowire, nanowires were doped with p-type dopant F4-TCNQ to fabricate a conductor. The conductivity of F4-TNCQ doped P3HT nanowires was measured with four point probe method and maximum conductivity was reached at 64.1 S/cm.

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목차

Introduction ………………………………….…………….. 1
Experimental Section………………………………………. 3
Results and Discussion …………………………………….. 5
Conclusion ...………………………………………………… 21
References …………………………………………………... 22

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