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Characterization of Electronic Band Structure for Thin Film Solar Cells

초록/요약

Korea imports more than 90% of its energy resources and imports more than 60% of its domestic energy consumption. However, it has been a major cause of pollution in the atmosphere due to the rising oil prices and the recent problems such as CO2, SO2 and fine dust that are generated when fossil fuels such as petroleum and coal are burned. Therefore, the discovery of clean and renewable energy sources has attracted worldwide attention as well as in Korea, and has been invested by many researchers and financial resources in various countries. In particular, the development of renewable energy sources in countries where underground resources are lacking, such as Korea, can greatly contribute to the development of national technology. Among them, solar cells are currently the most industrialized, and attract great attention as realistic means of securing renewable energy. Currently, about 85% of solar cells use silicon solar cells. Silicon (Si) solar cells have a high efficiency of up to 20% and a very long lifetime, but they are expensive due to expensive silicon materials. Recently, the price of silicon raw material has risen, making it difficult to install solar cells in ordinary homes. Silicon solar cell research and efficiency increase expectations are already different from the limit, and we should try to research next generation solar cell development. Next-generation solar cells are thin-film solar cells such as CIGS and CZTS, and organic-inorganic hybrid solar cells using perovskite. The most important point in this next-generation solar cell research is optimization of efficiency along with device stability. In this study the electronic structure of the bands calculate the offset directly experimentally to optimize efficiency and implement a band structure of thin-film solar cell of the next generation generated by a band gap difference. This is not to imagine the movement of electrons and holes by connecting the theoretical bandgap values, but it is possible to fully understand the mechanism of electron and hole transport by virtually calculated band offset values. Through these analysis methods, guidelines for the fabrication of solar cell devices can be presented and contributing to understand the cause of device efficiency accurately.

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목차

Chapter Ⅰ. Introduction 1
Chapter Ⅱ. Research background 4
Ⅱ.1. Electronic band structure 4
Ⅱ.2. CIGS solar cells 9
Ⅲ.3. ZnO/Cu2O solar cells 11
Ⅳ.4. Perovskite solar cells 15
Chapter Ⅲ. Optimized electronic structure of CIGS with Zn(O,S) buffer layer 18
Ⅲ.1. Introduction 18
Ⅲ.2. Experimental 19
Ⅲ.3. Results 22
Ⅲ.3.1. Electronic structure of the surface of CIGS layer deposited by In and Ga final processes 22
Ⅲ.3.2. Correlation between CBO and efficiency of Zn(O, S) buffer/CIGS interface with S concentration 29
Ⅲ.4. Conclusion 30
Chapter Ⅳ. Electronic structure of heterojunction solar cell according to according to ZnO/Cu2O arrangement 40
Ⅳ.1. Introduction 40
Ⅳ.2. Experimental 42
Ⅳ.3. Results.3. Results 43
Ⅳ.4. Conclusion 57
Chapter Ⅴ. Band alignment and PCE change due to Cs2O buffer insertion in ZnO/Cu2O HSC 58
Ⅴ.1. Introduction 58
Ⅴ.2. Experimental 60
Ⅴ.3. Results 61
Ⅴ.4. Conclusion 72
Chapter Ⅵ. Analysis of band alignments of two types of perovskite solar cells 73
Ⅵ.1. Introduction 73
Ⅵ.2. Experiment procedure 75
Ⅵ.2.1. Fabrication of perovskite PV cells 75
Ⅵ.2.2. Characterization 76
Ⅵ.3. Results 77
Ⅵ.4. Conclusion 90
Chapter Ⅶ. Conclusions 91
References 95

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