GaAs 기판 위에 성장시킨 고효율 InGaP/InGaAs 이중접합 태양전지의 특성
Characteristics of High Efficiency InGaP/InGaAs double junction solar cells Grown on GaAs substrates
- 주제(키워드) solar cells , InGaAs , InGaP
- 발행기관 아주대학교
- 지도교수 이재진
- 발행년도 2009
- 학위수여년월 2009. 8
- 학위명 석사
- 학과 및 전공 일반대학원 전자공학과
- 실제URI http://www.dcollection.net/handler/ajou/000000010148
- 본문언어 영어
- 저작권 아주대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
In this paper, we report on the conversion efficiency improvement in In0.50Ga0.50P/InxGa1-xAs tandem solar cells by employing metamorphic InGaAs bottom cell instead of lattice matched GaAs cell. In0.50Ga0.50P/In0.025Ga0.975As and In0.50Ga0.50P/GaAs double junction solar cells were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on GaAs substrates. High-resolution transmission electron microscopy (HR-TEM) measurement reveals the dislocation in the In0.025Ga0.975As layer which is caused by the lattice mismatch between In0.025Ga0.975As subcell and GaAs substrate. The increase of short circuit current density and decrease in open voltage circuit are attributed in bandgap decrease. Conversion efficiencies of these cells were measured to be 24.37% and 25.11% (AM1.5, 1 sun, 25oC) for the In0.50Ga0.50P/GaAs and In0.50Ga0.50P/In0.025Ga0.975As solar cells, respectively. These results prove the ability to fabricate high efficiency solar cell based on metamorphic approach with low dislocation densities.
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Contents
Acknowledgements i
Abstract ii
Contents iii
List of figures iv
List of tables vi
Chapter 1. Introduction 1
Chapter 2. Background 4
Chapter 3. Experimental procudure 13
3.1 Sample fabrication 13
3.2 Measurement methods 15
Chapter 4. Results and discussion 20
Chapter 5. Conclusions 30
References 31
